DUV Photon-Doping Metasurface

Bo-Ray Lee^1*, Ting An Shu¹, Ming Lun Tseng¹

¹電子所, 陽明交通大學, 新竹市, Taiwan

* Presenter:Bo-Ray Lee, email:dingdingbird.ee10@nycu.edu.tw

Plasmonic nanostructures with field enhancement are essential to numerous technological applications in the deep ultraviolet (DUV) range. However, general materials used for DUV plasmonics are usually limited in many applications due to their relatively low stability in
critical conditions. A proper material is highly needed for the further advancement. Here, we demonstrate intrinsic Si can be used as an effective plasmonic material in the DUV range. Due to the photon doping effect associated with the interband transition, Si has conduction
electrons under DUV illumination and thus can show plasmonic resonances. We will report several plasmonic designs including a quasi-bound state in the continuum (quasi-BIC) metasurface showing strong near-field enhancement. The robustness, CMOS compatibility,
and rich DUV plasmonic properties of Si empower its potential for the nanophotonics in this key wavelength range.

Keywords: metasurface, localized surface plasmon resonance, deep ultraviolet, CMOS compatible material