Quantum emitters in hexagonal boron nitride

Shih-Chu Lin^1*, Ya-Ching Tsai¹, Yu-Chen Chen², Wen-Hao Chang^1,2

¹Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
²Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan

* Presenter:Shih-Chu Lin, email:linsc81893@gmail.com

Single photon emitters (SPEs) have been widely reported in solid state system which play an important role in quantum technologies. In recent years, single photon emission from two-dimensional materials have been thoroughly investigated, in semiconducting transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (hBN). We focus on hBN which display outstanding optical properties at room temperature and offer straight-forward integration into on-chip architectures. In this work, we created SPEs in hBN films grown by chemical vapor deposition (CVD). Furthermore, we observed there are two defect types in hBN films. The broaden zero phonon line (ZPL) with strong phonon sideband (PSB), we call this defect the ‘’type I’’ emitter. Another defect display relatively narrow ZPL linewidth as compared to the type I and significantly reduced PSB, we call the ‘’type II’’ defect. We further show that the optical characteristic of these defect is very different.

Keywords: 2D material, hBN, single photon