Proximity effect in heterostructure comprised of topological insulator and 2D material

Cheng-Maw Cheng^1,2,3,4*, Shu Hsuan Su⁵, Pei-Yu Chuang¹, Hsin-Yu Chen⁵, Shih-Chang Weng¹, Wei-Chuan Chen¹, Ku-Ding Tsuei¹, Chao-Kuei Lee^6,2, Shih-Hsun Yu⁷, Mitch Ming-Chi Chou⁶, Li-Wei Tu², Horng-Tay Jeng⁸, Chien-Ming Tu³, Chih-Wei Luo^3,4, Tay-Rong Chang⁵, Jung-Chun Andrew Huang⁵

¹National Synchrotron Radiation Research Center, Hsinchu City, Taiwan
²Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
³Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu City, Taiwan
⁴Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei, Taiwan
⁵Department of Physics, National Cheng Kung University, Tainan, Taiwan
⁶Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan
⁷Department of Materials and Optoelectronics Science, National Sun Yat-sen University, Kaohsiung, Taiwan
⁸Department of Physics, National Tsing Hua University, Hsinchu City, Taiwan

* Presenter:Cheng-Maw Cheng, email:makalu@nsrrc.org.tw

Three-dimensional topological insulators (TI), which refer to the states of matter with an insulating gap in the bulk and gapless helical states on the surface, have attracted much attention due to their fascinating electronic structures. Proximity effects that occur in heterojunctions comprised of topological insulators and materials can provide an interesting platform to produce emerging quantum phenomena of Dirac fermions at the interfaces. In this talk, the electronic structure in heterostructures comprised of 2D materials and topological insulators, such as antimonene/TI and bismuthene/TI, were studied with angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscope (STM) and density function calculation (DFT). We found that the spin texture and the Dirac point could be manipulated in this 2D material/3D TI system. These novel phenomena termed the topological proximity effect, which occurs between a 2D materials and a three-dimensional topological insulators will be discussed.

Keywords: topological insultors, proximity effect , electronic structure, 2D materials, ARPES